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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤180mΩ@VGS = 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM R.
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) ≤180mΩ@VGS = 10V
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±25
12.8 9.05
51.2
PD
Total Dissipation
65
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A .
FQP13N10 - Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP13N10L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FQP13N10L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FQP13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 4 | FQP13N06L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FQP13N50 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FQP13N50C |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FQP13N50C |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FQP13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 10 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 11 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 12 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|