FQP13N10L |
Part Number | FQP13N10L |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation I... |
Features |
·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FQP13N10L ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 12.8 9.05 51.2 PD Total Dissipation 65 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
Document |
FQP13N10L Data Sheet
PDF 202.45KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FQP13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQP13N10 |
INCHANGE |
N-Channel MOSFET | |
3 | FQP13N10L |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FQP13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
5 | FQP13N06L |
Fairchild Semiconductor |
N-Channel MOSFET |