These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP13N06 60 13 9.2 52 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP13N06L |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FQP13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
3 | FQP13N10 |
INCHANGE |
N-Channel MOSFET | |
4 | FQP13N10L |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FQP13N10L |
INCHANGE |
N-Channel MOSFET | |
6 | FQP13N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FQP13N50C |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FQP13N50C |
ON Semiconductor |
N-Channel MOSFET | |
9 | FQP13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
11 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
12 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |