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FQP13N10L |
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| Part Number | FQP13N10L |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A • Low Gate Charge (Typ. 8.7 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (T... |
| Document |
 FQP13N10L Data Sheet
PDF 1.10MB |
| Distributor | Stock | Price | Buy |
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