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Features This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior.
This N-Channel enhancement mode power MOSFET is
• 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A
technology has been especially tailored to reduce on-state
• Low Gate Charge (Typ. 0 nC)
resistance, and to provide superior switching performance and
• Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor
• 100% Avalanche Tested
control, and variable switching power applications.
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA28N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 2 | FQA28N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 3 | FQA28N50F |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FQA20N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQA22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 6 | FQA22P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 7 | FQA24N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 8 | FQA24N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 9 | FQA24N50F |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FQA24N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 11 | FQA24N60 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | FQA27N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|