FQA24N50 - Fairchild Semiconductor

FQA24N50 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A
• Low Gate Charge (Typ. 90 nC)
• Low Crss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor c.