FQA28N50 - Fairchild Semiconductor

FQA28N50 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
• Low Gate Charge (Typ. 110 nC)
• Low Crss (Typ. 60 pF)
• 100% Avalanche Tested
• RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power suppl.