These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G
TO-3P
G DS
FQA Series
TC = 25°C unless otherwise noted
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA22P10 -100 -24 -17 -96 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
2 | FQA20N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
3 | FQA24N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQA24N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQA24N50F |
INCHANGE |
N-Channel MOSFET | |
6 | FQA24N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
7 | FQA24N60 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FQA27N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
9 | FQA28N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
10 | FQA28N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
11 | FQA28N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
12 | FQA28N50F |
INCHANGE |
N-Channel MOSFET |