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FQA28N15 |
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| Part Number | FQA28N15 |
| Manufacturer | Fairchild Semiconductor |
| Description | Features This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. ... |
| Features |
This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested control, and variable switching power applications. ... |
| Document |
 FQA28N15 Data Sheet
PDF 2.09MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA28N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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| 2 | FQA28N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 3 | FQA28N50F |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FQA20N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQA22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|