Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
• Low Gate Charge (Typ. 68 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
D
G DS
TO-3PN
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA13N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 2 | FQA13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 3 | FQA13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 4 | FQA13N50CF |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 6 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 7 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 8 | FQA10N80C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET |
|
| 9 | FQA10N80C_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |
|
| 10 | FQA11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 11 | FQA11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 12 | FQA11N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|