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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode powe.
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ. 72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic .
FQA11N90 - Inchange Semiconductor
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA11N90-F109 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FQA11N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 3 | FQA11N90C-F109 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FQA11N90C_F109 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FQA11N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |
|
| 6 | FQA11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 7 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 8 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 9 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 10 | FQA10N80C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET |
|
| 11 | FQA10N80C_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |
|
| 12 | FQA12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|