These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient swit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA13N80_F109 |
Fairchild Semiconductor |
MOSFET | |
2 | FQA13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQA13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQA13N50CF |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
6 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
7 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
8 | FQA10N80C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
9 | FQA10N80C_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET | |
10 | FQA11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
11 | FQA11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
12 | FQA11N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |