FQA13N50C - Fairchild Semiconductor

FQA13N50C 500V N-Channel MOSFET

These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-stat e resistance, provide superior swit ching performance, and wit hstand high energy pulse in the avalanche and commutation mode. These devic.

Features

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• 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
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● G! TO-3PN GSD FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current Drain Current - Continuous (TC = 100°C) - Pulsed (Note 1) FQA13N50C 500 13.5 8.5 54 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltag.