AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 f.
♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz
DRAIN BOND PAD SOURCE BOND PAD (2X)
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DESCRIPTION AND APPLICATIONS
GATE BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation. Typical applications include commercial and military high-performance power amplifiers.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP400F40ADFF1 |
JILIN SINO |
FAST RECOVERY DIODE MODULE | |
2 | FP401 |
Sanyo Semicon Device |
Very High-Speed Switching Applications | |
3 | FP402 |
Sanyo Semicon Device |
Very High-Speed Switching Applicaitons | |
4 | FP40R12KE3 |
Eupec |
IGBT | |
5 | FP40R12KE3 |
Infineon |
IGBT | |
6 | FP40R12KE3G |
Eupec |
IGBT | |
7 | FP40R12KE3G |
Infineon |
IGBT | |
8 | FP40R12KT3 |
Eupec |
IGBT | |
9 | FP40R12KT3 |
Infineon |
IGBT | |
10 | FP40R12KT3G |
Eupec |
IGBT | |
11 | FP40R12KT3G |
Infineon |
IGBT | |
12 | FP410L |
Siemens Semiconductor Group |
Double Differential Magneto Resistor |