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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP40R12KT3 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C Perio.
VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGon = 27 Ω Tvj = 25°C Tvj = 125°.
FP40R12KT3 - Eupec
Technische Information / technical information IGBT-Module IGBT-modules FP40R12KT3 Vorläufige Daten preliminary data I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FP40R12KT3G |
Eupec |
IGBT |
|
| 2 | FP40R12KT3G |
Infineon |
IGBT |
|
| 3 | FP40R12KE3 |
Eupec |
IGBT |
|
| 4 | FP40R12KE3 |
Infineon |
IGBT |
|
| 5 | FP40R12KE3G |
Eupec |
IGBT |
|
| 6 | FP40R12KE3G |
Infineon |
IGBT |
|
| 7 | FP400F40ADFF1 |
JILIN SINO |
FAST RECOVERY DIODE MODULE |
|
| 8 | FP401 |
Sanyo Semicon Device |
Very High-Speed Switching Applications |
|
| 9 | FP402 |
Sanyo Semicon Device |
Very High-Speed Switching Applicaitons |
|
| 10 | FP4050 |
Filtronic Compound Semiconductors |
2-WATT POWER PHEMT |
|
| 11 | FP410L |
Siemens Semiconductor Group |
Double Differential Magneto Resistor |
|
| 12 | FP412D250 |
Siemens Semiconductor Group |
Differential Magneto Resistor |
|