Ordering number:EN5048 FP402 N-Channel MOS Silicon FET Very High-Speed Switching Applicaitons Features · Low ON resistance. · Very high-speed switching. · Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3:Source.
· Low ON resistance.
· Very high-speed switching.
· Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection
1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain SANYO:PCP5 (Bottom view)
Package Dimensions
unit:mm 2102A
[FP402]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Sy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP400F40ADFF1 |
JILIN SINO |
FAST RECOVERY DIODE MODULE | |
2 | FP401 |
Sanyo Semicon Device |
Very High-Speed Switching Applications | |
3 | FP4050 |
Filtronic Compound Semiconductors |
2-WATT POWER PHEMT | |
4 | FP40R12KE3 |
Eupec |
IGBT | |
5 | FP40R12KE3 |
Infineon |
IGBT | |
6 | FP40R12KE3G |
Eupec |
IGBT | |
7 | FP40R12KE3G |
Infineon |
IGBT | |
8 | FP40R12KT3 |
Eupec |
IGBT | |
9 | FP40R12KT3 |
Infineon |
IGBT | |
10 | FP40R12KT3G |
Eupec |
IGBT | |
11 | FP40R12KT3G |
Infineon |
IGBT | |
12 | FP410L |
Siemens Semiconductor Group |
Double Differential Magneto Resistor |