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Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifi.
enspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value Tvj = 25°C Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage w w w t a .D t.
FP40R12KE3 - Infineon
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP40R12KE3 EconoPIM™2ModulmitTrench/Feldst.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FP40R12KE3G |
Eupec |
IGBT |
|
| 2 | FP40R12KE3G |
Infineon |
IGBT |
|
| 3 | FP40R12KT3 |
Eupec |
IGBT |
|
| 4 | FP40R12KT3 |
Infineon |
IGBT |
|
| 5 | FP40R12KT3G |
Eupec |
IGBT |
|
| 6 | FP40R12KT3G |
Infineon |
IGBT |
|
| 7 | FP400F40ADFF1 |
JILIN SINO |
FAST RECOVERY DIODE MODULE |
|
| 8 | FP401 |
Sanyo Semicon Device |
Very High-Speed Switching Applications |
|
| 9 | FP402 |
Sanyo Semicon Device |
Very High-Speed Switching Applicaitons |
|
| 10 | FP4050 |
Filtronic Compound Semiconductors |
2-WATT POWER PHEMT |
|
| 11 | FP410L |
Siemens Semiconductor Group |
Double Differential Magneto Resistor |
|
| 12 | FP412D250 |
Siemens Semiconductor Group |
Differential Magneto Resistor |
|