FNK10P170K - FNK

FNK10P170K P-Channel Power MOSFET

The FNK10P170K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. FNK10P170K General Features ● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugge.

Features

● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance Schematic diagram Application
● Power switch
● DC/DC converters TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package FNK10P170K FNK10P170K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuo.