FNK10N01 - FNK

FNK10N01 N-Channel Enhancement Mode Power MOSFET

The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unifo.

Features

● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application
● Power switching application
● Load switching
● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N01 FNK10N01 DFN5
*6-8L - - Absolute Maximum Ratings (TA=25℃.