FNK10P85K - FNK

FNK10P85K P-Channel Power MOSFET

The FNK10P85K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High densi.

Features

● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance Schematic diagram Application
● Power management in notebook computer
● Portable equipment and battery powered systems TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK10P85K FNK10P85K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS.