FNK10N01-A - FNK

FNK10N01-A N-Channel Power MOSFET

The FNK10N01-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good st.

Features

● VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking FNK10N01-A Device FNK1.