FNK10P170K |
Part Number | FNK10P170K |
Manufacturer | FNK |
Description | The FNK10P170K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. FNK10P170K General... |
Features |
● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schematic diagram Application ● Power switch ● DC/DC converters TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package FNK10P170K FNK10P170K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuo... |
Document |
FNK10P170K Data Sheet
PDF 1.18MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK10P18K |
FNK |
P-Channel Power MOSFET | |
2 | FNK10P85K |
FNK |
P-Channel Power MOSFET | |
3 | FNK10N01 |
FNK |
N-Channel Enhancement Mode Power MOSFET | |
4 | FNK10N01-A |
FNK |
N-Channel Power MOSFET | |
5 | FNK10N02 |
FNK |
N-Channel Power MOSFET |