FJN3303 - Fairchild Semiconductor

FJN3303 NPN Epitaxial Silicon Transistor

FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Co.

Features

erwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Conditions IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125Ω Min. 700 400 9 Typ. Max Units V V V 10 10 14 5 .