FJN3305R - Fairchild Semiconductor

FJN3305R NPN Epitaxial Silicon Transistor

FJN3305R FJN3305R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJN4305R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC P.

Features

Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=20mA 3.2 0.42 4.7 0.47 0.3 2.5 6.2 0.52 3.7 250 30 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJN3305R Typical Characteristics 1000 100 VCE = 5V R1 = 4.7K R2 = 10K 100 VCE =0.3V R1 = 4.7K R2 = 10K VI (on)[V], INPUT VOLTAGE 1 10 100 hFE, DC CURRENT GAIN 10 10 1 1 0.1 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA.