FJN3303 |
Part Number | FJN3303 |
Manufacturer | Fairchild Semiconductor |
Description | FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic ... |
Features |
erwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage
Conditions
IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125Ω
Min.
700 400 9
Typ.
Max
Units
V V V
10 10 14 5 ... |
Document |
FJN3303 Data Sheet
PDF 442.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJN3301R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | FJN3302R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | FJN3303R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | FJN3304R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | FJN3305R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |