FJN3309R - Fairchild Semiconductor

FJN3309R NPN Epitaxial Silicon Transistor

FJN3309R FJN3309R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJN4309R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG .

Features

VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 3.2 3.70 250 4.7 6.2 100 Min. 40 40 0.1 600 0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJN3309R Typical Characteristics 10000 1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = 5V R = 4.7K IC = 10IB R = 4.7K hFE, DC CURRENT GAIN 1000 100 100 10 10 0.1 1 1 10 100 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 350 PC[mW], POWER DISSIPATION 300 250 200 150 .