FJN3312R - Fairchild Semiconductor

FJN3312R NPN Epitaxial Silicon Transistor

FJN3312R FJN3312R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJN4312R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG P.

Features

CE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 32 3.7 250 47 62 100 Min. 40 40 0.1 600 0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJN3312R Package Dimensions TO-92 4.58
  –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38
  –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38
  –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild.