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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 49 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
650
V
Single Pulse Avalanche Energy (starting TJ =
EAS
49
mJ
25°C, IAS = 14 A, L = 0.5 mH, V = 50 V)
Continuous Rectified For.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSM1265A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSM0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSM0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSM0865A |
ON Semiconductor |
SiC Schottky Diode |
|
| 5 | FFSM0865B |
ON Semiconductor |
SiC Schottky Diode |
|
| 6 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 7 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 8 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSB10120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|