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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 qualified
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
www.onsemi.com
1.,3. Cathode 2. Anode Schottky Diode
3 1
2 D2PAK2 (TO−263−2L)
CASE 418BK MARKING DIAGRAM
$Y&Z&3&K FFSB 10120A
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FFSB10120A = Specific Device Code
ORDERING INFORMATION
See detailed ordering an.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSB1065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 3 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 5 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 7 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 8 | FFSB20120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB2065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB2065BDN-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB3065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSD0465A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|