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Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the .
• Max Junction Temperature 175°C
• Avalanche Rated 33 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V)
VRRM EAS
650
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSB10120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 7 | FFSB1065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 8 | FFSB20120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB2065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB2065BDN-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB3065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSD0465A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|