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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 37 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
DATA SHEET www.onsemi.com
Pin1
5
4 321
PQFN 8y8, 2P (Power88)
CASE 483AP
5. Cathode 3, 4. Anode 1, 2. Floating
Schottky Diode
MARKING DIAGRAM
AYWWKK FFSM 0865A
A YWW KK FFSM0865A
= Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSM0865B |
ON Semiconductor |
SiC Schottky Diode |
|
| 2 | FFSM0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSM0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSM1065B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSM1265A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 7 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 8 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSB10120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|