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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88 FFSM0665B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance se.
• Max Junction Temperature 175°C
• Avalanche Rated 24.5 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
650
V
Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V)
EAS
24.5 mJ
Continuous Rectified Forw.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSM0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 2 | FFSM0865A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSM0865B |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSM1065B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSM1265A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 7 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 8 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSB10120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|