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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 25 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VRRM Peak Repetitive Reverse Voltage
650
V
EAS
Single Pulse Avalanche Energy (Note 1)
25
mJ
IF
Continuous Rectified Forward Current @ TC < 160°C
4
A
Continuo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSD0665A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSD08120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 3 | FFSD0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 4 | FFSD10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSD1065A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSD1065B |
ON Semiconductor |
SiC Schottky Diode |
|
| 7 | FFSD1065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 8 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 9 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 10 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|