Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 94 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VRRM EAS IF
Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) Continuous Rectified Forward Current @.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSB2065BDN-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSB20120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 3 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 5 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 7 | FFSB0865B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 8 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSB10120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSB1065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSB3065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSD0465A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|