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FFSB0865B-F085 |
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| Part Number | FFSB0865B-F085 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability com... |
| Features |
• Max Junction Temperature 175°C • Avalanche Rated 33 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) VRRM EAS 650 ... |
| Document |
 FFSB0865B-F085 Data Sheet
PDF 376.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 4 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSB10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|