FDS4488 - Fairchild Semiconductor

FDS4488 N-Channel MOSFET

This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. Features.

Features

• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V
• Low gate charge (9.5 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability Applications
• DC/DC converter
• Load switch
• Motor drives D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings 30 ±25 (Note 1a) Units V V A W 7.9 40 2.5 1.2 1.0
  –55 to +175 Power.