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isc N-Channel MOSFET Transistor FDP39N20 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static drain-source on-resistance: RDS(on) ≤ 66mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T.
·With TO-220 packaging
·Drain Source Voltage-
: VDSS ≥ 200V
·Static drain-source on-resistance:
RDS(on) ≤ 66mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous;@Tc=25℃
39
A
IDM
Drain Current-Single Pulsed
156
A
PD
Total Dissipation
251
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Tem.
FDP39N20 - Fairchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This.
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