FDP3205 - Fairchild Semiconductor

FDP3205 N-Channel PowerTrench MOSFET

• This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing c.

Features

N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ Description
• This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant D G D S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted www.DataSheet4U.com Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG P.