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FDP3672 — N-Channel PowerTrench® MOSFET November 2013 FDP3672 N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ Features • RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applicatio.
• RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A
• QG(tot) = 28 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized Efficiency at High Frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
Formerly developmental type 82760
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Con.
FDP3672 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 105V ·Static drain-sou.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP3632 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP3632 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDP3632 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FDP3651U |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDP3651U |
INCHANGE |
N-Channel MOSFET |
|
| 6 | FDP3652 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDP3682 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FDP3682 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDP3682 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FDP3205 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 11 | FDP33N25 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDP33N25 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|