FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ March 2013 Features • RDS(on) = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances •.
• RDS(on) = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A
• QG(tot) = 18.5 nC( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
Formerly developmental type 82755
D
D
G S
D2-PAK (TO-263)
G D S
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continu.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-sou.
MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP3632 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP3632 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDP3632 |
INCHANGE |
N-Channel MOSFET | |
4 | FDP3651U |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP3651U |
INCHANGE |
N-Channel MOSFET | |
6 | FDP3652 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDP3672 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP3672 |
INCHANGE |
N-Channel MOSFET | |
9 | FDP3205 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
10 | FDP33N25 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP33N25 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | FDP39N20 |
Fairchild Semiconductor |
N-Channel MOSFET |