Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
·With TO-220 packaging
·Drain Source Voltage-
: VDSS ≥ 100V
·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
80
A
PD
Total Dissipation
255
W
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERIST.
FDP3651U - Fairchild Semiconductor
FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Featur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP3652 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP3632 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDP3632 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP3632 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FDP3672 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDP3672 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | FDP3682 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FDP3682 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDP3682 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FDP3205 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 11 | FDP33N25 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDP33N25 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|