FDD6676AS - Fairchild Semiconductor

FDD6676AS 30V N-Channel PowerTrench SyncFET

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic Sy.

Features

• 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge (46nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• RoHS Compliant D G S DTO-P-2A5K2 (TO-252) Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage J.