FDD6635 - Fairchild Semiconductor

FDD6635 35V N-CHANNEL MOSFET

This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications • Inverter • Power Supplies Features • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Fast Switching.

Features

• 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Fast Switching
• RoHS compliant D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VDS(Avalanche) VGSS ID Parameter Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Ratings 35 40 ±20 59 15 100 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 5) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Ope.