FDD6672A - Fairchild Semiconductor

FDD6672A null30V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V • High performance t.

Features

• 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability Applications
• DC/DC converter D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA =25 oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 65 100 70 3.2 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25 °C @ TA = 25° C @ TA = 25° C (Note 1) (Note 1a) (No.