FDD6670AL - Fairchild Semiconductor

FDD6670AL 30V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V • Low gate charge • Fa.

Features

• 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS(ON) Applications
• DC/DC converter
• Motor Drives D G S D I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S TA=25oC unless otherwise noted Absolute Maximum Ratings Symbo l VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 ±20 84 100 83 3.8 1.6
  –55 to +175 Units V A W TJ, TS.