FDD6637 - Fairchild Semiconductor

FDD6637 35V P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications • Inverter • Power Supplies Features • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V • High perfor.

Features

•
  –55 A,
  –35 V RDS(ON) = 11.6 mΩ @ VGS =
  –10 V RDS(ON) = 18 mΩ @ VGS =
  –4.5 V
• High performance trench technology for extremely low RDS(ON)
• RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) Power Dissipation @TC=25°C (Note 3) @ TA= 2 5 ° C (Note 1a) @ TA= 2 5 ° C (Note 1b) Operating and.