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FDD6637 |
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| Part Number | FDD6637 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in ... |
| Features |
• –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V • High performance trench technology for extremely low RDS(ON) • RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) Power Dissipation @TC=25°C (Note 3) @ TA= 2 5 ° C (Note 1a) @ TA= 2 5 ° C (Note 1b) Operating and... |
| Document |
 FDD6637 Data Sheet
PDF 279.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD6630A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 2 | FDD6630A |
On Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD6632 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD6635 |
Fairchild Semiconductor |
35V N-CHANNEL MOSFET |
|
| 5 | FDD6637_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET |
|