FDD6530A - Fairchild Semiconductor

FDD6530A 20V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V • Low gate charge (6.

Features

• 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V
• Low gate charge (6.5 nC typical)
• Fast switching Applications
• DC/DC converter
• Motor drives
• High performance trench technology for extremely low RDS(ON) . D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation TA=25 C unless otherwise noted o Parameter Ratings 20 ±8 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 21 100 33 3.3 1.6
  –55 to +175 TJ, TSTG Operating and Storage Junction .