FDD603AL - Fairchild Semiconductor

FDD603AL N-Channel MOSFET

This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits w.

Features

• 33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. • • • Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON) . Applications • • DC/DC converters Motor drives D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current PD T A = 25 ° C -Pulsed T A = 25 o C T A = 25 o C T J, T stg (Note 1) (Note 1a) T .