This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management Features • 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V .
• 50A, 30 V
RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Rati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD6030BL |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDD6030L |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDD6035AL |
Fairchild Semiconductor |
N-Channel/ Logic Level/ PowerTrench MOSFET | |
4 | FDD603AL |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDD6512A |
Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET | |
6 | FDD6530A |
Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET | |
7 | FDD6530A |
ON Semiconductor |
20V N-Channel Power MOSFET | |
8 | FDD6606 |
Advanced Analogic Technologies |
30V N-Channel PowerTrench MOSFET | |
9 | FDD6606 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
10 | FDD6612A |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
11 | FDD6630A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
12 | FDD6630A |
On Semiconductor |
N-Channel MOSFET |